SPD04P10PG - Infineon Technologies

SPD04P10PG Power-Transistor

SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD04P10P G -100 V 1Ω -4 A PG-TO252-3 Type Package SPD04P10P G PG-TO252-3 Marking 04P10P Lead free Yes Packing Non dry Tape and reel informati.

Features

• P-Channel
• Enhancement mode
• Normal level
• Avalanche rated
• Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD04P10P G -100 V 1Ω -4 A PG-TO252-3 Type Package SPD04P10P G PG-TO252-3 Marking 04P10P Lead free Yes Packing Non dry Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions I D T C=25 °C T C=100 °C Value -4 -2.8 Unit A Pulsed drain current I D,pulse V GS=-10 V, I D=-2.8 A -16 Avalanche energy, single pulse .