and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
6S2-12 SPB77N06S2-12 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Symbol min. RthJC RthJA RthJA - Values typ. 0.63 max. 0.95 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID=93µA Zero gate volt.
and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB70N10L |
Infineon Technologies |
SIPMOS Power-Transistor | |
2 | SPB70N10L |
Infineon Technologies |
SIPMOS Power-Transistor | |
3 | SPB73N03S2L-08 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPB73N03S2L-08 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPB-002 |
SSDI |
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY | |
6 | SPB-2026Z |
Sirenza Microdevices |
InGaP Amplifier | |
7 | SPB-2026Z |
RFMD |
0.7 GHz to 2.2 GHz 2W InGaP Amplifier | |
8 | SPB-3018 |
Sirenza Microdevices |
Medium Power Active Bias InGaP/GaAs HBT Amplifier | |
9 | SPB-3018Z |
Sirenza Microdevices |
Medium Power Active Bias InGaP/GaAs HBT Amplifier | |
10 | SPB-3610G |
Optoway Technology |
Fiber SFP Transceiver | |
11 | SPB-3610xG |
Optoway Technology |
Fiber SFP Transceiver | |
12 | SPB-3620G |
Optoway Technology |
Fiber SFP Transceiver |