SPB-3018Z - Sirenza Microdevices

SPB-3018Z Medium Power Active Bias InGaP/GaAs HBT Amplifier

The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintaining good linearity. The on-chip bias also allows the device output power (and current) to drive up towards saturation as the input power increases. The.

Features

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• Efficiency Available in Lead Free, RoHS compliant, & Green packaging Efficient Class AB operation P1dB = 30 dBm @ 1960MHz High Linearity/ACP performance Robust 1000V ESD, Class 1C MSL 1 moisture rating Power shutdown using VPC (less than 5uA IDQ) 15 12.5 10 7.5 5 2.5 0 15 16 17 18 19 20 21 22 23 24 ACP -50 -55 -60 -65 -70 -75 Applications
• W-CDMA, PCS, Cellular Systems
• Multi-Carrier Applications Units Frequency Min. Typ. Max. www.DataSheet4U.com Ch. Power Symbol Parameters P1dB Output Power at 1 dB Compression
* dBm 880 MHz 1960 MHz 2140 MHz 880 MHz 1960 MHz 2140 MHz.