and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
; DIN IEC 68-1 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI70N10L SPP70N10L,SPB70N10L Symbol min. RthJC RthJA RthJA - Values typ. max. 0.6 62.5 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 100 1.2 Values typ. 1.6 max. 2 Unit V Gate .
and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB73N03S2L-08 |
Infineon Technologies |
OptiMOS Power-Transistor | |
2 | SPB73N03S2L-08 |
Infineon Technologies |
OptiMOS Power-Transistor | |
3 | SPB77N06S2-12 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPB77N06S2-12 |
Infineon Technologies AG |
OptiMOS Power-Transistor | |
5 | SPB-002 |
SSDI |
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY | |
6 | SPB-2026Z |
Sirenza Microdevices |
InGaP Amplifier | |
7 | SPB-2026Z |
RFMD |
0.7 GHz to 2.2 GHz 2W InGaP Amplifier | |
8 | SPB-3018 |
Sirenza Microdevices |
Medium Power Active Bias InGaP/GaAs HBT Amplifier | |
9 | SPB-3018Z |
Sirenza Microdevices |
Medium Power Active Bias InGaP/GaAs HBT Amplifier | |
10 | SPB-3610G |
Optoway Technology |
Fiber SFP Transceiver | |
11 | SPB-3610xG |
Optoway Technology |
Fiber SFP Transceiver | |
12 | SPB-3620G |
Optoway Technology |
Fiber SFP Transceiver |