SPB77N06S2-12 |
Part Number | SPB77N06S2-12 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
6S2-12 SPB77N06S2-12
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
2)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.63 max. 0.95 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = V DS
ID=93µA
Zero gate volt... |
Document |
SPB77N06S2-12 Data Sheet
PDF 338.67KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SPB77N06S2-12 |
Infineon Technologies AG |
OptiMOS Power-Transistor | |
2 | SPB70N10L |
Infineon Technologies |
SIPMOS Power-Transistor | |
3 | SPB70N10L |
Infineon Technologies |
SIPMOS Power-Transistor | |
4 | SPB73N03S2L-08 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPB73N03S2L-08 |
Infineon Technologies |
OptiMOS Power-Transistor |