SPB2026Z - RFMD

SPB2026Z 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER

RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is well suited for use as.

Features

an input power detector, on/off power control, ESD protection, excellent over- Optimum Technology Matching® Applied all robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant. GaAs HBT GaAs MESFET p Vcc = 5V  InGaP HBT SiGe BiCMOS Functional Block Diagram Si BiCMOS SSZPPB- 2-2002266 SiGe HBT GaAs pHEMT Si CMOS RFIN V bias = 5V A c tiv e Bias RFOUT Si BJT GaN HEMT RF MEMS Pow er Up/Dow n Co n tr o l Pow er Detec tor Features
 P1dB=33.8dBm at 5V, 1960 MHz
 ACP=-45dBc with 25dBm Channel Power at 1960MHz
 On-Chip Input .