Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances 1 P-TO220-3-31 2 3 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO220-3-31 P-TO263-3-2 .
20 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 208 34.5 Operating and storage temperature Page 1 Tj , Tstg -55...+150 °C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP20N60C2, SPB20N60C2 SPA20N60C2 Symbol min. Values typ. max. Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB20N60C3 |
Infineon Technologies |
Cool MOS& Power Transistor | |
2 | SPB20N60C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPB20N60S5 |
Infineon Technologies |
Cool MOS Power Transistor | |
4 | SPB20N60S5 |
INCHANGE |
N-Channel MOSFET | |
5 | SPB200UFA |
VMI |
(SPBxx0UFA) Single Phase Bridge | |
6 | SPB200UFB |
VMI |
(SPBxx0UFB) Single Phase Bridge | |
7 | SPB2026Z |
RFMD |
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER | |
8 | SPB21N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
9 | SPB21N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
10 | SPB21N50C3 |
Infineon Technologies |
Power Transistor | |
11 | SPB21N50C3 |
INCHANGE |
N-Channel MOSFET | |
12 | SPB-002 |
SSDI |
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY |