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SPB2026Z |
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| Part Number | SPB2026Z |
| Manufacturer | RFMD |
| Description | RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made wi... |
| Features |
an input power
detector, on/off power control, ESD protection, excellent over-
Optimum Technology Matching® Applied
all robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant.
GaAs HBT GaAs MESFET
p
Vcc = 5V
InGaP HBT
SiGe BiCMOS
Functional Block Diagram
Si BiCMOS
SSZPPB- 2-2002266
SiGe HBT GaAs pHEMT Si CMOS
RFIN
V bias = 5V
A c tiv e Bias
RFOUT
Si BJT GaN HEMT RF MEMS
Pow er Up/Dow n
Co n tr o l
Pow er Detec tor
Features
P1dB=33.8dBm at 5V, 1960 MHz ACP=-45dBc with 25dBm Channel Power at 1960MHz On-Chip Input ... |
| Document |
 SPB2026Z Data Sheet
PDF 460.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB200UFA |
VMI |
(SPBxx0UFA) Single Phase Bridge |
|
| 2 | SPB200UFB |
VMI |
(SPBxx0UFB) Single Phase Bridge |
|
| 3 | SPB20N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 4 | SPB20N60C3 |
Infineon Technologies |
Cool MOS& Power Transistor |
|
| 5 | SPB20N60C3 |
INCHANGE |
N-Channel MOSFET |
|