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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPB20N60S5 VDS RDS(on) ID 600 0.19 20 V Ω A PG-TO263 Type SPB20N60S5 Package PG-TO263 Ordering Code Q67040-S4171 Marking 20N60S5 Maximu.
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SPB20N60S5 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB20N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPB20N60C3 |
Infineon Technologies |
Cool MOS& Power Transistor |
|
| 3 | SPB20N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPB200UFA |
VMI |
(SPBxx0UFA) Single Phase Bridge |
|
| 5 | SPB200UFB |
VMI |
(SPBxx0UFB) Single Phase Bridge |
|
| 6 | SPB2026Z |
RFMD |
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER |
|
| 7 | SPB21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 8 | SPB21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 9 | SPB21N50C3 |
Infineon Technologies |
Power Transistor |
|
| 10 | SPB21N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | SPB-002 |
SSDI |
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY |
|
| 12 | SPB-2026Z |
Sirenza Microdevices |
InGaP Amplifier |
|