SML40L57 - Seme LAB

SML40L57 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML40L57 TO–264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) 3.10 (0.122) 3.48 (0.137) 5.79 (0.228) 6.20 (0.244) 25.48 (1.003) 26.49 (1.043) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 2.29 (0.090) 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) VDSS 400V 57A ID(con.

Features

stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
  – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
  – Source Voltage Gate
  – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 400 57 228 ±30 ±40 520 4.16
  –55 to 150 300 57 50 2500 V A A V W W/°C °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperatur.