SML40A26 - Seme LAB

SML40A26 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML40A26 TO–3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.47 (0.058) 1.60 (0.063) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) VDSS 400V 25.5A ID(cont) RDS(on) 0.150Ω • Faster.

Features

ed Drain Current 1 Gate
  – Source Voltage Gate
  – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 400 25.5 102 ±30 ±40 235 1.88
  –55 to 150 300 25.5 30 1300 V A A V W W/°C °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 4.00mH, RG = 25Ω, Peak IL = 25.5A Semelab plc. Telephone +44(0)1455 556565.