SML40H28 TO–258 Package Outline. Dimensions in mm (inches) 17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035) 17.96 (0.707) 17.70 (0.697) 13.84 (0.545) 13.58 (0.535) 1 2 3 4.19 (0.165) 3.94 (0.155) Dia. 21.21 (0.835) 20.70 (0.815) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 400V 28A ID(cont) RDS(on) 0.140Ω .
Pulsed Drain Current 1 Gate
– Source Voltage Gate
– Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
400 28 112 ±30 ±40 250 2.0
–55 to 150 300 28 30 1300
V A A V W W/°C °C A mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 3.32mH, RG = 25Ω, Peak IL = 28A
Semelab plc.
Telephone +44(0)1455 556565. F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SML40H22 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
2 | SML40A26 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
3 | SML40B27 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
4 | SML40B28 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
5 | SML40B37 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
6 | SML40J53 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
7 | SML40J93 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
8 | SML40L57 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
9 | SML42 |
MACOM |
Thin Film Limiter Module | |
10 | SML4728A |
ANOVA |
Surface Mount Zener Diodes | |
11 | SML4728A |
Eris |
Zener Diode | |
12 | SML4728A |
EIC |
SURFACE MOUNT SILICON ZENER DIODES |