SML40B27 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1..
GS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
– Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
– Source Voltage Gate
– Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
400 27 108 ±20 ±30 280 2.24
–55 to 150 300 27 30 1210
V A A V W W/°C °C A mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SML40B28 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
2 | SML40B37 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
3 | SML40A26 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
4 | SML40H22 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
5 | SML40H28 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
6 | SML40J53 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
7 | SML40J93 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
8 | SML40L57 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
9 | SML42 |
MACOM |
Thin Film Limiter Module | |
10 | SML4728A |
ANOVA |
Surface Mount Zener Diodes | |
11 | SML4728A |
Eris |
Zener Diode | |
12 | SML4728A |
EIC |
SURFACE MOUNT SILICON ZENER DIODES |