The SMG138K utilized advanced processing techniques to achieve the lowest possible on-resistance extremely efficient and cost-effectiveness device. S 2 L 3 Top View B 1 B C D The SMG138K is universally used for all commercial industrial application D G C H Drain Gate Source G H J K J K L S Features * Simple drive Requirement * Small package outline .
* Simple drive Requirement
* Small package outline
D
All Dimension in mm
* RoHS Compliant Product
G
Marking : 138E
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com 3 Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] Pulsed Drain Current
1,2 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
50
±20 640 500 950 1.38 0.01
Unit
V V mA mA mA W
W/ C
o o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Res.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG130 |
Bosch |
3-axis gyroscope | |
2 | SMG1332E |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
3 | SMG1333 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
4 | SMG1 |
Tyco Electronics |
Voltage-Controlled Attenuator Module | |
5 | SMG1 |
MA-COM |
Voltage-Controlled Attenuator Module | |
6 | SMG120N40E1 |
Silikron |
IGBT | |
7 | SMG120N40E1DA |
Silikron |
IGBT | |
8 | SMG120N50E1 |
Silikron |
IGBT | |
9 | SMG120N60E1 |
Silikron |
IGBT | |
10 | SMG120N60EP |
Silikron |
IGBT | |
11 | SMG120N80E1 |
Silikron |
IGBT | |
12 | SMG120N80EPD |
Silikron |
IGBT |