The SMG1332E provide the designer with best combination of fast swirching, low on-resistance and cost-effectiveness. S 2 A L 3 Top View SC-59 Dim A B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 B C D G H J K D Features * Simple Gate Drive * 2KV ESD Rating (Per MIL-STD-883D) * Small Pack.
* Simple Gate Drive
* 2KV ESD Rating (Per MIL-STD-883D)
* Small Package Outline
H
G C J
K L S
Drain Gate Source
All Dimension in mm
D
G
S
Absolute Maximum www.DataSheet4U.com
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2 3 3
Ratings
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Parameter
Ratings
20
±5 600 470 2.5 1.0 0.008
Unit
V V mA mA A W
W / oC
o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG1333 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
2 | SMG130 |
Bosch |
3-axis gyroscope | |
3 | SMG138K |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
4 | SMG1 |
Tyco Electronics |
Voltage-Controlled Attenuator Module | |
5 | SMG1 |
MA-COM |
Voltage-Controlled Attenuator Module | |
6 | SMG120N40E1 |
Silikron |
IGBT | |
7 | SMG120N40E1DA |
Silikron |
IGBT | |
8 | SMG120N50E1 |
Silikron |
IGBT | |
9 | SMG120N60E1 |
Silikron |
IGBT | |
10 | SMG120N60EP |
Silikron |
IGBT | |
11 | SMG120N80E1 |
Silikron |
IGBT | |
12 | SMG120N80EPD |
Silikron |
IGBT |