SMG120N60E1 - Silikron

SMG120N60E1 IGBT

Main Product Characteristics: VCES 1250V IC 60A VCE(sat) 1.9V GC E Features and Benefits:  Trench FS technology offering  High speed switching  Low gate charge and VCE(sat)  High ruggedness, temperature stable behavior  Maximum junction temperature 175°C TO - 247 Applications:  Solar Inverters  Uninterruptible power supplies  Motor drives .

Features

 Trench FS technology offering
 High speed switching
 Low gate charge and VCE(sat)
 High ruggedness, temperature stable behavior
 Maximum junction temperature 175°C TO - 247 Applications:
 Solar Inverters
 Uninterruptible power supplies
 Motor drives
 Air condition SMG120N60E1 Schematic Diagram Absolute Max Rating: Symbol VCES VGES IC ICpuls - IFM PD TJ TSTG TL Parameter Collector-Emitter Voltage Gate- Emitter Voltage Collector Current Collector Current @TC = 100 °C Pulsed Collector Current，tp limited by Tjmax Turn off safe operating area，VCE=1200V，TJ=175°C Diode Continuous For.