The SMG1333 provide the designer with the best combination of fast switching, low on-resistance S 2 L 3 Top View B 1 B C D and cost-effectiveness. D G H C J K Features * Simple Gate Drive * Small package outline * Fast switching speed H G J K L Drain Gate Source S D Applications * Power Management in Notebook Computer * Protable Equipment * Batter.
* Simple Gate Drive
* Small package outline
* Fast switching speed
H
G
J K L
Drain Gate Source
S
D
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
All Dimension in mm
G
Marking : 1333
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Sate-Source Voltage www.DataSheet4U.com Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2
Symbol
VDS VGS
Ratings
-20
±12
Unit
V V mA mA A W
W/ C
o o
3
ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o
o
-550 -440 -2.5 1 0.008
3
Total Power Dissipation Linear Derating Facto.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG1332E |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
2 | SMG130 |
Bosch |
3-axis gyroscope | |
3 | SMG138K |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
4 | SMG1 |
Tyco Electronics |
Voltage-Controlled Attenuator Module | |
5 | SMG1 |
MA-COM |
Voltage-Controlled Attenuator Module | |
6 | SMG120N40E1 |
Silikron |
IGBT | |
7 | SMG120N40E1DA |
Silikron |
IGBT | |
8 | SMG120N50E1 |
Silikron |
IGBT | |
9 | SMG120N60E1 |
Silikron |
IGBT | |
10 | SMG120N60EP |
Silikron |
IGBT | |
11 | SMG120N80E1 |
Silikron |
IGBT | |
12 | SMG120N80EPD |
Silikron |
IGBT |