SMBD914 - Siemens Semiconductor Group

SMBD914 Silicon Switching Diode

Silicon Switching Diode q SMBD 914 For high-speed switching applications Type SMBD 914 Marking s5D Ordering Code (tape and reel) Q68000-A625 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 54 ˚C Junction temperature Storage .

Features

racteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA VR = 1 V, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr
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  – 2 4 pF ns V(BR) VF IR
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  – 25 5 30 50 nA µA µA µA 100
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  – 1 V V Values typ. max. Unit Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF Semiconductor Group 2 SMBD 914 Forward current IF = f (TA
*; TS)
* Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 ˚C Peak forward current IFM = f (t) .