Silicon Switching Diode Array For high-speed switching applications q Common cathode q SMBD 6100 Type SMBD 6100 Marking s5B Ordering Code (tape and reel) Q68000-A8438 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 35 ˚C Junc.
apacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr
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–
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– 2.5 15 pF ns V(BR) VF 550 850 IR
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–
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– 700 1100 100 nA 70
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– V mV Values typ. max. Unit
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω
Oscillograph:
R = 50 Ω tr = 0.35 ns C ≤ 1 pF
Semiconductor Group
2
SMBD 6100
Forward current IF = f (TA
*; TS)
* Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF) TA = 25 ˚C
Peak forward current IFM = f (t) TA = 25 ˚C
Semiconductor Group
3
SM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMBD6050 |
Siemens Semiconductor Group |
Silicon Switching Diode | |
2 | SMBD2835 |
Siemens Semiconductor Group |
Silicon Switching Diode Array | |
3 | SMBD2836 |
Siemens Semiconductor Group |
Silicon Switching Diode Array | |
4 | SMBD2837 |
Siemens Semiconductor Group |
Silicon Switching Diode Array | |
5 | SMBD2838 |
Siemens Semiconductor Group |
Silicon Switching Diode Array | |
6 | SMBD7000 |
Siemens Semiconductor Group |
Silicon Switching Diode Array | |
7 | SMBD7000 |
Infineon Technologies AG |
Silicon Switching Diode Array | |
8 | SMBD914 |
Siemens Semiconductor Group |
Silicon Switching Diode | |
9 | SMBD914 |
Infineon Technologies AG |
Silicon Switching Diode | |
10 | SMBD914 |
Fairchild Semiconductor |
Small Signal Diode | |
11 | SMB-141N |
SunMate |
SURFACE MOUNT GLASS TUBE | |
12 | SMB-181N |
SunMate |
SURFACE MOUNT GLASS TUBE |