SMBD6050 - Siemens Semiconductor Group

SMBD6050 Silicon Switching Diode

Silicon Switching Diode q SMBD 6050 For high-speed switching applications Type SMBD 6050 Marking s5A Ordering Code (tape and reel) Q68000-A8439 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 54 ˚C Junction temperature Stora.

Features

1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr
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  – 2.5 10 pF ns V(BR) VF 550 850 IR
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  – 700 1100 100 nA 70
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  – V mV Values typ. max. Unit Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF Semiconductor Group 2 SMBD 6050 Forward current IF = f (TA
*; TS)
* Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 ˚C Peak forward current IFM = f (t) TA = 25 ˚C Semiconductor Group 3 SMBD 6050 Forward volta.