SMBD7000 - Infineon Technologies AG

SMBD7000 Silicon Switching Diode Array

SMBD7000/MMBD7000... Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 3 D 1 D 2 1 2 Type SMBD7000/MMBD7000 Parameter Diode reverse voltage Peak reverse voltage Forward current Package SOT23 Configuration series Symbol VR VRM IF IFSM 4.5 0.5 Ptot Tj Tstg 330 150 -65 ... 150 Value 100 100 200 Marking s5C Unit V m.

Features

100 V VR = 50 V, TA = 150 °C Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA VF 550 670 750 700 820 1000 1100 1250 IR 0.3 0.5 100 mV µA AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA, RL = 100 Ω Test circuit for reverse recovery time D.U.T. CT trr - - 2 4 pF ns Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph ΙF Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF EHN00019 2 Mar-10-2004 SMBD7000/MMBD7000... Reverse current IR = ƒ (TA) VR = Parameter 10 5 nA Forward .