SIDC30D120H8 - Infineon

SIDC30D120H8 Fast switching diode

AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subject (major changes since last revision) 2.0 Final data sheet 2.1 Editorial changes Date 30.12.2014 14.10.2015 Edited by INFINEON Technologies, L4057C, Rev 2.1, 14.10.2015 SIDC30D120H8 Published .

Features

 1200V Emitter Controlled technology 120 µm chip
 Soft, fast switching
 Low reverse recovery charge
 Small temperature coefficient
 Qualified according to JEDEC for target applications Recommended for:
 Power modules and discrete devices Applications:
 SMPS, resonant applications, drives Chip Type VR IFn SIDC30D120H8 1200V 50A Die Size 5.5 x 5.5 mm2 Package sawn on foil Mechanical Parameters Die size Area total 5.5 x 5.5 30.25 mm2 Anode pad size 4.78 x 4.78 Thickness 120 µm Wafer size 200 mm Max. possible chips per wafer 891 Passivation frontside Photoimide Pad m.