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SIDC30D120H8 |
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| Part Number | SIDC30D120H8 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subject (major changes since last revision) ... |
| Features |
1200V Emitter Controlled technology 120 µm chip Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target applications Recommended for: Power modules and discrete devices Applications: SMPS, resonant applications, drives Chip Type VR IFn SIDC30D120H8 1200V 50A Die Size 5.5 x 5.5 mm2 Package sawn on foil Mechanical Parameters Die size Area total 5.5 x 5.5 30.25 mm2 Anode pad size 4.78 x 4.78 Thickness 120 µm Wafer size 200 mm Max. possible chips per wafer 891 Passivation frontside Photoimide Pad m... |
| Document |
 SIDC30D120H8 Data Sheet
PDF 205.78KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SIDC30D120F6 |
Infineon |
Fast switching diode |
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| 2 | SIDC32D170H |
Infineon |
Fast switching diode |
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| 3 | SIDC38D60C8 |
Infineon |
Fast switching diode |
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| 4 | SIDC38D65C8 |
Infineon |
Fast switching diode |
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| 5 | SIDC02D60C8 |
Infineon |
Fast switching diode |
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