SIDC38D65C8 - Infineon

SIDC38D65C8 Fast switching diode

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given i.

Features

• 650V EMCON 3 technology 65 µm chip Recommended for:
• Power module
• Soft, fast switching
• Low reverse recovery charge C
• Small temperature coefficient Applications:
• Qualified according to JEDEC for target
• Drives applications
• White goods
• Resonant applications Chip Type VR I 1) Fn Die Size Package SIDC38D65C8 650V 150A 4.9 x 7.8 mm2 sawn on foil 1 ) nominal forward current at Tc = 100°C, not subject to production test - verified by design/characterisation Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer P.