SIDC38D60C8 - Infineon

SIDC38D60C8 Fast switching diode

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given i.

Features

This chip is used for:
• 600V Emitter Controlled 3 technology
• Power module 70 µm chip
• soft, fast switching C
• low reverse recovery charge
• small temperature coefficient Applications:
• Drives Chip Type SIDC38D60C8 VR IF 600V 150A Die Size 4.9 x 7.8 mm2 Package sawn on foil Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 4.9 x 7.8 38.22 mm2 4.28 x 7.18 70 µm 200 mm 694 Photoimide 3200 .