SID04N60-C - SeCoS

SID04N60-C N-Channel MOSFET

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications such as power suppliers, converters, power motor control, and bridge circuits. FEATURES Hi.

Features

High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified MARKING 04N60 Date Code ORDER INFORMATION Part Number Type SID04N60-C Lead (Pb)-free and Halogen-free TO-251 A B GE K F C D H MJ P REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40 0.43 0.90 6.50 7.50 7.20 9.65 REF. G H J K M P 2 Drain Millimeter Min. Max. 5.40 6.25 0.85 1.50 2.30 Typ. 0.60 1.05 0.50 0.90 0.43 0.62 1 Gate ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate.