SID05N10 - SeCoS

SID05N10 N-Channel Enhancement Mode Power MOSFET

The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. TO-251 FEATURES Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating are.

Features

Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel MARKING: 05N10 Date code 1 Gate 2 Drain 3 Source A B GE K F C D H MJ P REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55 6.80 7.20 7.20 7.80 REF. G H J K M P Millimeter Min. Max. 5.40 5.80 0.90 1.50 2.30 0.60 0.90 0.50 0.70 0.45 0.60 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation @ TC = 25°C Thermal Resistance Junc.