SID05N60J - SeCoS

SID05N60J N-Channel MOSFET

This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently. This new device also offers a drain-to-source diode fast recovery time. Designed for high voltage, the device has high-speed switching applications such as power supplies, converters, power motor controls and bridge circuits. TO-251J FEATURES Lo.

Features

Lower RDS(on) High current rating Lower capacitance Lower total gate charge Avalanche energy specified MARKING CJD05N60B = Date Code MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy 1 Total Power Dissipation Thermal Resistance from Junction to Ambient Maximum Lead Temperature for Soldering Purposes@ 5-second duration Operating Junction and Storage Temperature Range REF. A B C D E Millimeter Min. Max. 6.5 6.7 6 6.2 10.4 11 3.5 REF 0.46 0.58 REF. F G H I.