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SID04N60-C |
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| Part Number | SID04N60-C |
| Manufacturer | SeCoS |
| Description | This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recover... |
| Features |
High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified
MARKING
04N60
Date Code
ORDER INFORMATION
Part Number
Type
SID04N60-C
Lead (Pb)-free and Halogen-free
TO-251
A B
GE
K F
C D
H
MJ
P
REF.
A B C D E F
Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40 0.43 0.90 6.50 7.50 7.20 9.65
REF.
G H J K M P
2
Drain
Millimeter Min. Max. 5.40 6.25 0.85 1.50
2.30 Typ. 0.60 1.05 0.50 0.90 0.43 0.62
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate... |
| Document |
 SID04N60-C Data Sheet
PDF 238.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SID04N65SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 2 | SID05N10 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | SID05N60J |
SeCoS |
N-Channel MOSFET |
|
| 4 | SID1003 |
SANKEN |
(SID300 / SID1003) 5phi Round Infrared LED |
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| 5 | SID1003BQ |
Sanken electric |
Infrared LEDs |
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