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The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacita.
hysical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC DataShee DataSheet4U.com DataSheet4U.com This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 72573 02-Jun-04 www.vishay.com 1 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SPICE Device Model Si9936BDY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Si9936DY |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 2 | Si9936DY |
Vishay |
Dual N-Channel MOSFET |
|
| 3 | SI9936DY |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 4 | SI9933ADY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET |
|
| 5 | SI9933BDY |
Vishay Siliconix |
Dual P-Channel 2.5-V (G-S) MOSFET |
|
| 6 | SI9933DY |
TEMIC Semiconductors |
Dual P-Channel Enhancement-Mode MOSFET |
|
| 7 | SI9934BDY |
Vishay Siliconix |
Dual P-Channel 2.5-V (G-S) MOSFET |
|
| 8 | Si9939DY |
Vishay |
Complimentary MOSFET |
|
| 9 | SI9910 |
Vishay Siliconix |
Adaptive Power MOSFET Driver1 |
|
| 10 | SI9912 |
Vishay Siliconix |
Half-Bridge MOSFET Driver for Switching Power Supplies |
|
| 11 | SI9913 |
Vishay Siliconix |
Dual MOSFET Bootstrapped Driver with Break-Before-Make |
|
| 12 | SI9925 |
NXP |
N-channel enhancement mode field-effect transistor |
|