SI9934BDY - Vishay Siliconix

SI9934BDY Dual P-Channel 2.5-V (G-S) MOSFET

Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES ID (A) −6.4 −5.1 rDS(on) (W) 0.035 @ VGS = −4.5 V 0.056 @ VGS = −2.5 V D TrenchFETr Power MOSFET S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si9934BDY—E3 Si9934BDY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET.

Features

ID (A) −6.4 −5.1 rDS(on) (W) 0.035 @ VGS = −4.5 V 0.056 @ VGS = −2.5 V D TrenchFETr Power MOSFET S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si9934BDY—E3 Si9934BDY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA =.