SI5445BDC - Vishay Siliconix

SI5445BDC P-Channel MOSFET

www.DataSheet.co.kr Si5445BDC New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.033 @ VGS = −4.5 V −8 0.043 @ VGS = −2.5 V 0.060 @ VGS = −1.8 V FEATURES ID (A) −7.1 −6.2 −5.3 14 Qg (Typ) D TrenchFETr Power MOSFET 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BM XX Lot Traceability and Date Code Par.

Features

ID (A) −7.1 −6.2 −5.3 14 Qg (Typ) D TrenchFETr Power MOSFET 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BM XX Lot Traceability and Date Code Part # Code Bottom View D P-Channel MOSFET Ordering Information: Si5445BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C.