www.DataSheet.co.kr Si5441DC Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.055 @ VGS = −4.5 V −20 0.06 @ VGS = −3.6 V 0.083 @ VGS = −2.5 V FEATURES ID (A) −5.3 −5.1 −4.3 11 Qg (Typ) D TrenchFETr Power MOSFET D 2.5-V Rated Pb-free Available 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BA XX Lot Traceabilit.
ID (A) −5.3 −5.1 −4.3 11 Qg (Typ) D TrenchFETr Power MOSFET D 2.5-V Rated Pb-free Available 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BA XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5441DC Si5441DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI5441BDC |
Vishay Siliconix |
P-Channel MOSFET | |
2 | Si544 |
Skyworks |
Crystal Oscillator | |
3 | Si544 |
Silicon Laboratories |
Crystal Oscillator | |
4 | SI5440DC |
Vishay Siliconix |
N-Channel MOSFET | |
5 | Si5442DU |
Vishay |
N-Channel MOSFET | |
6 | SI5443DC |
Vishay Siliconix |
P-Channel MOSFET | |
7 | SI5445BDC |
Vishay Siliconix |
P-Channel MOSFET | |
8 | SI5445DC |
Vishay Siliconix |
P-Channel MOSFET | |
9 | SI5447DC |
Vishay Siliconix |
P-Channel MOSFET | |
10 | SI5448DU |
Vishay |
MOSFET | |
11 | SI5449DC |
Vishay Siliconix |
P-Channel MOSFET | |
12 | Si540 |
Silicon Labs |
Crystal Oscillator |