SI5443DC - Vishay Siliconix

SI5443DC P-Channel MOSFET

P-Channel 2.5-V (G-S) MOSFET Si5443DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.065 at VGS = - 4.5 V - 20 0.074 at VGS = - 3.6 V 0.110 at VGS = - 2.5 V ID (A) ± 4.9 ± 4.6 ± 3.8 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 2.5 V Rated 1206-8 ChipFET® 1 D D D D D D S G Bottom View Marki.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFETs: 2.5 V Rated 1206-8 ChipFET® 1 D D D D D D S G Bottom View Marking Code BB XX Lot Traceability and Date Code Part # Code Ordering Information: Si5443DC-T1-E3 (Lead-(Pb)-free) Si5443DC-T1-GE3 (Lead-(Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID ± 4.9 ± 3.5 ± 3.6 ± 2.6 P.