SI5441BDC - Vishay Siliconix

SI5441BDC P-Channel MOSFET

www.DataSheet.co.kr Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.045 @ VGS = −4.5 V −20 0.052 @ VGS = −3.6 V 0.080 @ VGS = −2.5 V FEATURES ID (A) −6.1 −5.7 −4.6 11.5 Qg (Typ) D TrenchFETr Power MOSFET 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BK XX Lot Traceability and Date Code .

Features

ID (A) −6.1 −5.7 −4.6 11.5 Qg (Typ) D TrenchFETr Power MOSFET 1206-8 ChipFETr 1 D D D D S D D G S G Marking Code BK XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5441BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85.