SI4955DY - Vishay Siliconix

SI4955DY Assymetrical Dual P-Channel MOSFETs

New Product Si4955DY Vishay Siliconix Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 - 30 0.054 at VGS = - 10 V 0.100 at VGS = - 4.5 V Channel-2 - 20 0.027 at VGS = - 4.5 V 0.035 at VGS = - 2.5 V 0.048 at VGS = - 1.8 V ID (A) - 5.0 - 3.7 - 7.0 - 6.2 - 5.2 FEATURES • TrenchFET® Power MOSFETs • Low .

Features

• TrenchFET® Power MOSFETs
• Low Gate Drive (2.5 V) Capability For Channel 2 APPLICATIONS
• Game Station - Load Switch RoHS COMPLIANT S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4955DY-T1-E3 (Lead (Pb)-free) S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 10 sec Steady State Channel-2 10 sec Steady State Drain-Source Voltage VDS - 30 - 20 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 5.0 - 4.0 .