SI4366DY - Vishay Siliconix

SI4366DY N-Channel MOSFET

New Product N-Channel 30-V (D-S) MOSFET Si4366DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.0048 at VGS = 10 V 30 0.0055 at VGS = 4.5 V ID (A) 20 19 SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4366DY-T1 Si4366DY-T1-E3 (Lead (Pb)-free) FEATURES • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier.

Features

• TrenchFET® Power MOSFET
• Optimized for “Low Side” Synchronous Rectifier Operation
• 100 % RG Tested APPLICATIONS
• DC/DC Converters
• Synchronous Rectifiers D Available RoHS
* COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 20 15 13 10 Pulsed Drain Current (10 µs Pulse Width) IDM 60 Continuous Source Current (Diode Conduction)a IS 2.9 1.3 Maximum Power Dissipationa TA = .