New Product Si4128DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 10.9 3.8 nC 9.7 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Notebook PC SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D .
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Notebook PC
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G
- System Power - Load Switch
D
Ordering Information: Si4128DY-T1-E3 (Lead (Pb)-free) Si4128DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Opera.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4128BDY |
Vishay |
N-Channel MOSFET | |
2 | Si4122 |
Skyworks |
DUAL-BAND RF SYNTHESIZER | |
3 | SI4122 |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
4 | SI4122DY |
Vishay Siliconix |
N-Channel MOSFET | |
5 | SI4122G |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
6 | Si4123 |
Skyworks |
DUAL-BAND RF SYNTHESIZER | |
7 | SI4123 |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
8 | SI4123G |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
9 | SI4124DY |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SI4126 |
Silicon Laboratories |
ISM RF SYNTHESIZER | |
11 | SI4126DY |
Vishay |
N-Channel MOSFET | |
12 | SI4100DY |
Vishay Siliconix |
N-Channel MOSFET |