SI4100DY - Vishay Siliconix

SI4100DY N-Channel MOSFET

N-Channel 100-V (D-S) MOSFET Si4100DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.063 at VGS = 10 V 100 0.084 at VGS = 6 V ID (A)d 6.8 5.8 Qg (Typ.) 9 nC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • High Frequency Boost Co.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• 100 % UIS Tested APPLICATIONS
• High Frequency Boost Converter
• LED Backlight for LCD TV D G Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free) Si4100DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Avalanche Current Single .