www.DataSheet.co.kr New Product Si4122DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0045 at VGS = 10 V 0.006 at VGS = 4.5 V ID (A)a 27.2 29 nC 23.5 Qg (Typ.) FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • DC/DC Conversion SO-8 S S S G 1 2 3 4 Top Vie.
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• DC/DC Conversion
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G
D
S Ordering Information: Si4122DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 40 ± 25 27.2 20.1 19.2b, c 15.3b, c 70 5.4 2.7b, c 40 80 6.0 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si4122 |
Skyworks |
DUAL-BAND RF SYNTHESIZER | |
2 | SI4122 |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
3 | SI4122G |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
4 | Si4123 |
Skyworks |
DUAL-BAND RF SYNTHESIZER | |
5 | SI4123 |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
6 | SI4123G |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
7 | SI4124DY |
Vishay Siliconix |
N-Channel MOSFET | |
8 | SI4126 |
Silicon Laboratories |
ISM RF SYNTHESIZER | |
9 | SI4126DY |
Vishay |
N-Channel MOSFET | |
10 | SI4128BDY |
Vishay |
N-Channel MOSFET | |
11 | SI4128DY |
Vishay |
N-Channel 30-V (D-S) MOSFET | |
12 | SI4100DY |
Vishay Siliconix |
N-Channel MOSFET |