New Product N-Channel 30 V (D-S) MOSFET Si4128BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.021 at VGS = 10 V 30 0.033 at VGS = 4.5 V ID (A) 12a 6 Qg (Typ.) 3.7 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS.
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
D G
Top View Ordering Information: Si4128BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4128DY |
Vishay |
N-Channel 30-V (D-S) MOSFET | |
2 | Si4122 |
Skyworks |
DUAL-BAND RF SYNTHESIZER | |
3 | SI4122 |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
4 | SI4122DY |
Vishay Siliconix |
N-Channel MOSFET | |
5 | SI4122G |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
6 | Si4123 |
Skyworks |
DUAL-BAND RF SYNTHESIZER | |
7 | SI4123 |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
8 | SI4123G |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
9 | SI4124DY |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SI4126 |
Silicon Laboratories |
ISM RF SYNTHESIZER | |
11 | SI4126DY |
Vishay |
N-Channel MOSFET | |
12 | SI4100DY |
Vishay Siliconix |
N-Channel MOSFET |