SI3493DV - Vishay Siliconix

SI3493DV P-Channel 20-V (D-S) MOSFET

Si3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.027 @ VGS = −4.5 V −20 0.035 @ VGS = −2.5 V 0.048 @ VGS = −1.8 V FEATURES ID (A) −7 −6.2 −5.2 21 Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance APPLICATIONS D Load Switch D PA Switch D Battery Switch TSOP-6 Top View 1 3 mm 6 (3) G 2 5 .

Features

ID (A) −7 −6.2 −5.2 21 Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance APPLICATIONS D Load Switch D PA Switch D Battery Switch TSOP-6 Top View 1 3 mm 6 (3) G 2 5 (4) S 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3493DV-T1 Si3493DV-T1—E3 (Lead (Pb)-Free) Marking Code: 93xxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and.