SI3493BDV - Vishay Siliconix

SI3493BDV P-Channel 20-V (D-S) MOSFET

New Product Si3493BDV www.DataSheet4U.com Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.0275 at VGS = - 4.5 V - 20 0.034 at VGS = - 2.5 V 0.045 at VGS = - 1.8 V ID (A) - 8.0a - 7.9 - 2.2 26.2 nC Qg (Typ) FEATURES • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • Load Switch •.

Features

• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested RoHS COMPLIANT APPLICATIONS
• Load Switch
• PA Switch
• Battery Switch TSOP-6 Top View 1 3 mm 6 (4) S 2 5 Marking Code (3) G AK XXX Lot Traceability and Date Code Part # Code (1, 2, 5, 6) D P-Channel MOSFET 3 4 2.85 mm Ordering Information: Si3493BDV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C M.