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SI3493DDV - Vishay

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SI3493DDV MOSFET

www.vishay.com Si3493DDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET TSOP-6 Single S 4 D 5 D 6 Marking code: BQ 1 D Top View 2 D PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) a, d Configuration 3 G -20 0.0240 0.0321 0.0511 19.8 -8 Single FEATURES • Tre.

Features


• TrenchFET® Gen III p-channel power MOSFET
• RDS(on) rating at VGS = -1.8 V
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS
• Battery management in mobile devices
• Battery switch
• Load switch G
• PA switch S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TSOP-6 Si3493DDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (.

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