New Product Si1405BDH www.DataSheet4U.com Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) 0.112 at VGS = - 4.5 V 0.160 at VGS = - 2.5 V 0.210 at VGS = - 1.8 V ID (A)c - 1.6 - 1.6 - 1.6 3.67 nC Qg (Typ) FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch for Portable Devices RoHS COMPLIANT SOT-363 SC-70 (.
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
SOT-363 SC-70 (6-LEADS)
D 1 6 D Marking Code BO D 2 5 D Part # Code XX YY Lot Traceability and Date Code
G
3 Top View
4
S
Ordering Information: Si1405BDH-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C TC = 25 °C Maximum Pow.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1405DL |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
2 | SI1400DL |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SI1401EDH |
Vishay Siliconix |
P-Channel MOSFET | |
4 | SI1402DH |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
5 | SI1403BDL |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET | |
6 | SI1403CDL |
Vishay Siliconix |
P-Channel MOSFET | |
7 | SI1403DL |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET | |
8 | SI1404DH |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SI1406DH |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET | |
10 | SI1407DL |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
11 | SI1410EDH |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET | |
12 | SI1411DH |
Vishay Siliconix |
P-Channel 150-V (D-S) MOSFET |