N-Channel 25-V (D-S) MOSFET Si1404DH Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.35 @ VGS = 4.5 V 25 0.45 @ VGS = 2.5 V ID (A) 1.57 1.39 Qg (Typ) 1.3 FEATURES D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) D1 6D D2 5D G3 4S Top View Ordering Information: Si1404DH-T1 Si1404.
D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) D1 6D D2 5D G3 4S Top View Ordering Information: Si1404DH-T1 Si1404DH-T1—E3 (Lead (Pb)-Free) Marking Code AD X YY Lot Traceability and Date Code Part # Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS VGS 25 "8 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1400DL |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SI1401EDH |
Vishay Siliconix |
P-Channel MOSFET | |
3 | SI1402DH |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
4 | SI1403BDL |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET | |
5 | SI1403CDL |
Vishay Siliconix |
P-Channel MOSFET | |
6 | SI1403DL |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET | |
7 | SI1405BDH |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
8 | SI1405DL |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
9 | SI1406DH |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET | |
10 | SI1407DL |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
11 | SI1410EDH |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET | |
12 | SI1411DH |
Vishay Siliconix |
P-Channel 150-V (D-S) MOSFET |