New Product Si1403BDL www.DataSheet4U.com Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) 0.150 at VGS = - 4.5 V 0.175 at VGS = - 3.6 V 0.265 at VGS = - 2.5 V ID (A) - 1.5 - 1.4 - 1.2 2.9 Qg (Typ) FEATURES • TrenchFET® Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code OD XX YY Lot Traceabil.
• TrenchFET® Power MOSFET
RoHS
COMPLIANT
SOT-363 SC-70 (6-LEADS)
D 1 6 D Marking Code OD XX YY Lot Traceability and Date Code Part # Code Top View D 2 5 D
G
3
4
S
Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1403CDL |
Vishay Siliconix |
P-Channel MOSFET | |
2 | SI1403DL |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET | |
3 | SI1400DL |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SI1401EDH |
Vishay Siliconix |
P-Channel MOSFET | |
5 | SI1402DH |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
6 | SI1404DH |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SI1405BDH |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
8 | SI1405DL |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
9 | SI1406DH |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET | |
10 | SI1407DL |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
11 | SI1410EDH |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET | |
12 | SI1411DH |
Vishay Siliconix |
P-Channel 150-V (D-S) MOSFET |