N-Channel 20 V (D-S) MOSFET Si1400DL Vishay Siliconix PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.150 at VGS = 4.5 V 0.235 at VGS = 2.5 V ID (A) 1.7 1.3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 2.5 V Rated • Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) D1 6D D2 5D G3 4S Marking C.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-363 SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Marking Code
YY
ND XX
Lot Traceability and Date Code
Part # Code
Top View
Ordering Information: Si1400DL-T1-E3 (Lead (Pb)-free) Si1400DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current Continuous Source Current (Diode.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1401EDH |
Vishay Siliconix |
P-Channel MOSFET | |
2 | SI1402DH |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
3 | SI1403BDL |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET | |
4 | SI1403CDL |
Vishay Siliconix |
P-Channel MOSFET | |
5 | SI1403DL |
Vishay Siliconix |
P-Channel 2.5-V (G-S) MOSFET | |
6 | SI1404DH |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SI1405BDH |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
8 | SI1405DL |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
9 | SI1406DH |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET | |
10 | SI1407DL |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET | |
11 | SI1410EDH |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET | |
12 | SI1411DH |
Vishay Siliconix |
P-Channel 150-V (D-S) MOSFET |