www.DataSheet.co.kr New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V N-Channel 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V 0.756 at VGS = - 4.5 V P-Channel - 20 1.038 at VGS = - 2.5 V 1.440 at VGS = - 1.8 V 2.4 at VGS = - 1.5 V ID (A) 0.5 0.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• High-Side Switching
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Typical ESD Protection: N-Channel 1500 V P-Channel 1000 V (HBM)
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch, Small Signal Switches and Level-Shift Switches - Battery Operated Systems - Portable
SOT-563 SC-89
S1 1 6 D1
D1
S2
G1
G1 2 5 G2 S2
Marking Code: 5
G2
D2
3
4
Top View
Ordering Information: Si1016CX-T1-GE3 (Lead (Pb)-free and Halogen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1016X |
Vishay Siliconix |
MOSFET | |
2 | SI1010 |
Silicon Laboratories |
Ultra Low Power 10-Bit ADC | |
3 | SI1011 |
Silicon Laboratories |
Ultra Low Power ADC | |
4 | SI1012 |
MCC |
N-Channel Transistor | |
5 | SI1012 |
Silicon Laboratories |
Ultra Low Power ADC | |
6 | SI1012CR |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SI1012R |
Vishay Siliconix |
N-Channel MOSFET | |
8 | Si1012X |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SI1013 |
Silicon Laboratories |
Ultra Low Power ADC | |
10 | SI1013CX |
Vishay |
MOSFET | |
11 | SI1013R |
Vishay Siliconix |
P-Channel MOSFET | |
12 | SI1013X |
Vishay Siliconix |
P-Channel MOSFET |