SI1012R - Vishay Siliconix

SI1012R N-Channel MOSFET

Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V ID (mA) 600 500 350 FEATURES D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection BENEFIT.

Features

D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-75A or SC-89 G 1 Ordering Information: SC-75A (SOT
  – 416): Si1012R
  –Marking Code : C SC-89 (SOT
  – 490): Si1012X
  –Mark.